Design and Optimization of the 850GHz Monolithic Receiving Front-end Based on GaAs Schottky Diodes

Abstract

The paper presents a low noise efficiency circuit design of the 850GHz monolithic receiving front-end based on GaAs Schottky diodes and describes specific working mechanism and modeling approach. In this circuit, the local oscillator multiplier chain uses a parallel diode pair and directly frequency multiplier with nine times for reducing parasitic parameters. In order to obtain accurate model results quickly, the electromagnetic model of the planar Schottky diode, mixer and frequency multiplier are designed separately based on physical characteristics. Finally, the receiving front-end accurate electromagnetic model is built and simulated by iterative optimization, which shows a good noise performance that $4450\mathrm{K} \sim 4700\mathrm{K}$ and conversion gain 15dB $\sim 20$ dB within the frequency band of 830GHz $\sim 870$ GHz.