Large-Signal MESFET Parameter Extraction Techniques

Abstract

Much publicity has surrounded the recent introduction of nonlinear microwave CAD tools into the marketplace. However, active device modeling remains as the major limitation of these tools. Furthermore, techniques that characterize nonlinear microwave devices in a systematic, accurate, and repeatable manner still must be developed in order to assure effective and proper use of the new CAD tools. Two techniques that offer the promise of practical device characterization are discussed in this paper. The flrst technique makes use of time-domain signal sampling to "extract" the nonlinear behavior of a device in terms of device model parameters. The second technique d e s use of load-pull measurements.