Employing Quaternary Alingan Layer to Improve Deep Ultraviolet Light-Emitting Diodes

Abstract

Thin aluminium indium gallium nitride (AlInGaN) layer is sandwiched in AlGaN-based light-emitting diodes (LEDs) for the enhanced optoelectronic output. Our simulation finding shows that our proposed structure (LED 2) has a higher internal quantum efficiency (IQE) peak of 58% than the reference structure (LED 1). The rate of recombination in the MQW region of the LED 2 structure is improved by ~48%, which can be attributed to the enhanced carrier density and recombination in the multiquantum wells (MQWs) of LED 2.