Improved Enhanced-Boost Quasi-Z-Source Inverter

Abstract

This paper presents a new impedance network inverter topology called an improved enhanced-boost quasi-Z-source inverter (improved-EBqZSI). The proposed improved-EBqZSI topology employs five capacitors, seven diodes, and five inductors in the impedance network to increase the boost factor. It provides continuous input current, lower voltage stress on capacitors and diodes, and lower current stress on inductors. Additionally, the improved-EBqZSI has higher gain at a lower duty ratio; it can operate at a higher modulation index, thus reducing stress across the inverter switches. The paper presents the operation of the inverter in shoot-through (ST), and non-shoot-through (NST) states, mathematical analysis, computer simulation, and experiment results. A laboratory prototype has been developed to validate the simulation results for the high gain capability.