Influences of thicknesses and structures of barrier cap layers on As ion profiles and implant damages in HgCdTe epilayers

Changzhi Shi, Chun Lin, Yanfeng Wei, Lu Chen, Z. Ye
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引用次数: 2

Abstract

The barrier cap layer (BCL) is considered to be able to absorb partially implant induced damages during ion implantation, thus its structure and property could impact the result of ion implantation. In this paper, for As ion implantation in HgCdTe, the different BCLs were deposited on the CdZnTe-based (LPE) and GaAs-based (MBE) HgCdTe epilayers, respectively. Then, the influences of thicknesses and structures of these BCLs on dopant profiles and implant damages were investigated. The as-grown BCLs include thermally evaporated (TE) ZnS, TE CdTe, electron beam evaporated (EBE) CdTe and in-situ CdTe/ZnTe grown by MBE. The SIMS profiles and TEM characterization indicate: For TE ZnS BCLs, there exists an optimized thickness to obtain the deepest As indiffusion after high temperature annealing, and the end-of-range (EOR) depth is linearly proportional to the thickness ratio of a-MCT layer/damage layer. For TE CdTe BCLs, the barrier layer induced channeling effect (BLICE) occurs to the thin BCL samples, while this effect is suppressed in the thick BCL samples. The phenomenon might be due to that the blocking effect of the layered structure inside each crystal column becomes dominate in the thick BCL samples. Additionally, the EBE CdTe BCL with layered structure can suppress effectively the BLICE effect; in the in-situ CdTe/ZnTe BCL, the short defect layer generated in the CdTe buffer layer and the amorphization of the ZnTe layer during ion implantation also play a significant role in suppressing the BLICE effect.
阻挡帽层厚度和结构对HgCdTe涂层中As离子分布和植入损伤的影响
在离子注入过程中,屏障帽层(BCL)被认为能够部分吸收离子注入引起的损伤,因此其结构和性质会影响离子注入的效果。为了在HgCdTe中注入As离子,将不同的bcl分别沉积在cdznte基(LPE)和gaas基(MBE)的HgCdTe涂层上。然后,研究了这些bcl的厚度和结构对掺杂物轮廓和植入物损伤的影响。生长的bcl包括热蒸发(TE) ZnS、TE CdTe、电子束蒸发(EBE) CdTe和MBE原位生长的CdTe/ZnTe。SIMS曲线和TEM表征表明:对于TE - ZnS bcl,高温退火后存在最优As扩散厚度,且EOR末端深度与a-MCT层/损伤层厚度之比成线性关系。对于TE - CdTe - BCL,薄BCL样品中发生了势垒层诱导的沟道效应(BLICE),而厚BCL样品中这种效应被抑制。这种现象可能是由于在厚的BCL样品中,每个晶柱内部的层状结构的阻挡作用占主导地位。此外,层状结构的EBE CdTe BCL可以有效抑制BLICE效应;在原位CdTe/ZnTe BCL中,CdTe缓冲层中产生的短缺陷层和离子注入过程中ZnTe层的非晶化对BLICE效应的抑制也起着重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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