First Demonstration of High-Sensitivity (NEP<1fW•Hz-1/2) Back-Illuminated Active-Matrix Deep UV Image Sensor by Monolithic Integration of Ga2O3 Photodetectors and Oxide Thin-Film-Transistors
Yuan Qin, Congyan Lu, Zhaoan Yu, Zhihong Yao, F. Wu, Danian Dong, Xiaolong Zhao, Guangwei Xu, Yuhao Zhang, Shibing Long, Ling Li, Ming Liu
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引用次数: 0
Abstract
We, for the first time, demonstrated a back-illuminated active-matrix deep UV (DUV) image sensor by monolithically integrating an ultra-wide bandgap (UWBG) Ga2O3 photodetector (PD) array and IGZO thin-film-transistors (TFT) based on a low temperature back-end-of-line (BEOL) process. Benefited from the low off-state current of 10-13A, high on/off ratio of 5×108, and high stability of IGZO TFTs, the integrated PD/TFT sensor cell presents super-high sensitivity with NEP down to 1fW•Hz-1/2 with a high responsivity and specific detectivity of 302A/W and 1.7×1015Jones, respectively. The 32×32 DUV image sensor shows excellent uniformity and demonstrates a superior image recognition ability with light intensity down to 2 μW/cm2. This scalable, high-resolution DUV image sensor shows great promise for advanced imaging and machine vision applications.