Group IV TFETs for very low power applications

2012 IEEE Subthreshold Microelectronics Conference (SubVT) Pub Date : 2012-10-01 DOI:10.1109/SUBVT.2012.6404326

Hsu-Yu Chang, J. Woo

引用次数: 0

Abstract

Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>;107) and improved output characteristics due to dramatic reduction of tunneling resistance.

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用于极低功率应用的第四组tfet

采用激光退火技术成功制备了新型源口袋硅隧道场效应晶体管(ttfet)。它具有降低阈值电压，陡峭的亚阈值摆幅(46mV/dec)，优异的ION/IOFF比(>;107)以及由于隧道电阻的显著降低而改善的输出特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 IEEE Subthreshold Microelectronics Conference (SubVT)

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