Humidity resistance of GaAs ICs

W. Roesch, R. Winters, A. Rubalcava, B. Ingle
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引用次数: 12

Abstract

A series of investigations into reliability effects of moisture on GaAs structures have lead to the conclusion that GaAs devices have resistance to degradation effects of humidity. This not only provides evidence that GaAs devices are ready for low-cost non-hermetic packages, but that GaAs ICs may have superior reliability performance compared to silicon devices under accelerated humidity conditions.
GaAs集成电路的耐湿性
通过对湿气对砷化镓结构可靠性影响的一系列研究,得出了砷化镓器件具有抗湿气退化效应的结论。这不仅证明了GaAs器件已经为低成本非密封封装做好了准备,而且在加速湿度条件下,与硅器件相比,GaAs ic可能具有优越的可靠性性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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