{"title":"Fabrication challenge, device characterization of high-Q 2D, 3D passives devices on glass","authors":"Sheng-Chi Hsieh, Chien-Hua Chen, Yung-shun Chang, T. Lee, Pao-Nan Lee, Chen-Chao Wang, Yuan-Hsi Chou","doi":"10.1109/EDAPS.2016.7893130","DOIUrl":null,"url":null,"abstract":"It is demonstrated that the high quality factor of thick metal spiral inductors, 3D solenoid inductor and low harmonics power level can be achieved by using a mature glass substrate technology. The quality factor of inductors in a 2D/3D type can achieve 70∼100 in this study. The harmonics power level is measured along transmission line and 2nd /3rd harmonics can be below −110 dBm at 30 dBm input power. It is very critical and helpful with high Q-factor and lower harmonics power level for the FEM development of current and next generation's commercial 4G carrier aggregation system.","PeriodicalId":191549,"journal":{"name":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","volume":"20 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Electrical Design of Advanced Packaging and Systems (EDAPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDAPS.2016.7893130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
It is demonstrated that the high quality factor of thick metal spiral inductors, 3D solenoid inductor and low harmonics power level can be achieved by using a mature glass substrate technology. The quality factor of inductors in a 2D/3D type can achieve 70∼100 in this study. The harmonics power level is measured along transmission line and 2nd /3rd harmonics can be below −110 dBm at 30 dBm input power. It is very critical and helpful with high Q-factor and lower harmonics power level for the FEM development of current and next generation's commercial 4G carrier aggregation system.