The Sensitive Detection and Analyses of SiH3 and SiH Radicals Using Multiphoton Ionization Spectroscopy

Abstract

The free radicals, silyl (SiH3) and silylidyne (SiH), play important roles at the gas-surface interface during the chemical vapor deposition (CVD) of silicon films from silane, SiH4. We will report recent experiments that enable resonance enhanced multiphoton ionization (REMPI) spectroscopy to detect these radicals with great sensitivity. These newly developed REMPI detection methods should allow experimentalists to measure the relative concentration profile of SiH3, SiH, and Si radicals in the same experimental configuration and under the same conditions. For the SiH3 radical the new spectra will also permit temperature measurements.