Effect of gate engineering in FinFET for RF applications

K. Sivasankaran, T. R. K. K. Chitroju, K. Reddy, M. S. Subrahmanyam, M. Harsha, P. S. Mallik
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引用次数: 7

Abstract

This paper presents the Radio Frequency Performance of gate engineered FinFET. Gate engineering is process of implementing different materials with different work functions on gate of device, and studying its impact on device operation. We have analyzed the capability of Single Material Gate (SMG), Dual Material Gate (DMG) and Triple Material Gate (TMG) gate FinFET for RF performance characteristics. We have used 3-D device simulation to extract the RF figure of merits such as transconductance generation factor (gm/Id), cut-off frequency (ft) and maximum oscillation frequency (fmax). The effect of different gate length ratios has also been reported. The result shows that TMG-FinFET exhibit superior RF performance as compared to SMG and DMG- FinFET.
栅极工程对射频应用中FinFET的影响
本文介绍了门控FinFET的射频性能。浇口工程是将不同的材料具有不同的工作功能施加在设备浇口上,并研究其对设备运行的影响的过程。我们分析了单材料栅极(SMG)、双材料栅极(DMG)和三材料栅极(TMG) FinFET的射频性能特性。我们使用三维器件仿真方法提取了跨导产生因子(gm/Id)、截止频率(ft)和最大振荡频率(fmax)等优点的射频图。不同栅长比的影响也有报道。结果表明,与SMG和DMG- FinFET相比,TMG-FinFET具有更好的射频性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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