R. Chen, P. Weckx, S. Salahuddin, S.-W. Kim, G. Sisto, G. van der Plas, M. Stucchi, R. Baert, P. Debacker, M. Na, J. Ryckaert, D. Milojevic, E. Beyne
{"title":"3D-optimized SRAM Macro Design and Application to Memory-on-Logic 3D-IC at Advanced Nodes","authors":"R. Chen, P. Weckx, S. Salahuddin, S.-W. Kim, G. Sisto, G. van der Plas, M. Stucchi, R. Baert, P. Debacker, M. Na, J. Ryckaert, D. Milojevic, E. Beyne","doi":"10.1109/IEDM13553.2020.9371905","DOIUrl":null,"url":null,"abstract":"We present local & global SRAM macro optimizations for 3nm FinFET and 2nm Nanosheet using Face-to-Face (F2F) and Wafer-to-Wafer (W2W) hybrid bonding at sub 1um pitch. Bonding pad parasitics are measured experimentally to calibrate RC models of the pad used to evaluate 3D-optimized memory macro delays. 3Doptimized macros are designed to reduce the macro external delay by ~50%. With customized SRAM BEOL, performance improvement of up to 70% for larger memories is observed compared with 2D macro. We also show that bit-cell tech-level optimizations have minor impact on the performance of large caches at advanced nodes due to high metal resistance in the macro global routing. Finally, at system-level we partition a L2 data memory (with 3D-optimized macro) from logic showing that the 3D implementation achieves a total of 33% performance gain with respect to a 2D implementation.","PeriodicalId":415186,"journal":{"name":"2020 IEEE International Electron Devices Meeting (IEDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Electron Devices Meeting (IEDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM13553.2020.9371905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
We present local & global SRAM macro optimizations for 3nm FinFET and 2nm Nanosheet using Face-to-Face (F2F) and Wafer-to-Wafer (W2W) hybrid bonding at sub 1um pitch. Bonding pad parasitics are measured experimentally to calibrate RC models of the pad used to evaluate 3D-optimized memory macro delays. 3Doptimized macros are designed to reduce the macro external delay by ~50%. With customized SRAM BEOL, performance improvement of up to 70% for larger memories is observed compared with 2D macro. We also show that bit-cell tech-level optimizations have minor impact on the performance of large caches at advanced nodes due to high metal resistance in the macro global routing. Finally, at system-level we partition a L2 data memory (with 3D-optimized macro) from logic showing that the 3D implementation achieves a total of 33% performance gain with respect to a 2D implementation.