3D-optimized SRAM Macro Design and Application to Memory-on-Logic 3D-IC at Advanced Nodes

R. Chen, P. Weckx, S. Salahuddin, S.-W. Kim, G. Sisto, G. van der Plas, M. Stucchi, R. Baert, P. Debacker, M. Na, J. Ryckaert, D. Milojevic, E. Beyne
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引用次数: 11

Abstract

We present local & global SRAM macro optimizations for 3nm FinFET and 2nm Nanosheet using Face-to-Face (F2F) and Wafer-to-Wafer (W2W) hybrid bonding at sub 1um pitch. Bonding pad parasitics are measured experimentally to calibrate RC models of the pad used to evaluate 3D-optimized memory macro delays. 3Doptimized macros are designed to reduce the macro external delay by ~50%. With customized SRAM BEOL, performance improvement of up to 70% for larger memories is observed compared with 2D macro. We also show that bit-cell tech-level optimizations have minor impact on the performance of large caches at advanced nodes due to high metal resistance in the macro global routing. Finally, at system-level we partition a L2 data memory (with 3D-optimized macro) from logic showing that the 3D implementation achieves a total of 33% performance gain with respect to a 2D implementation.
3d优化的SRAM宏设计及其在高级节点上的内存-逻辑3d集成电路的应用
我们提出了局部和全局SRAM宏观优化3nm FinFET和2nm纳米片使用面对面(F2F)和晶圆对晶圆(W2W)混合键合在亚1um间距。通过实验测量键合垫的寄生性,以校准用于评估3d优化内存宏延迟的键合垫的RC模型。三维优化宏的设计使宏的外部延迟减少了50%。使用定制SRAM BEOL,与2D宏相比,更大内存的性能提高高达70%。我们还表明,由于宏观全局路由中的高金属电阻,位单元技术级优化对高级节点上的大型缓存的性能影响很小。最后,在系统级,我们从逻辑上划分了一个L2数据内存(使用3D优化的宏),表明3D实现相对于2D实现实现了33%的性能增益。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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