Physical Insight into electrostatically doped TFET considering Ambipolarity conduction

Abstract

To substitute physical doping or acceptor dopant species with free electron or hole charges generated by electrodes, electrostatic doping is one of the emerging strategies in device design. Due to this, we examined the conventional Tunnel Field Effect Transistor (TFET) based on electrostatic doping in this study, known as the electrostatically doped TFET (ED-TFET). Our investigation concentrated mostly on ambipolar leakage current, one of the inherent issues with TFETs. Additionally, we suggest using drain oxide thickness (PG1-OT) to greatly reduce ambipolarity conduction. Finally, we have examined the performance of the suggested structure on analog characteristics like transconductance (gm) and cutoff frequency (fT) and we have also examined the impact of PG1-OT electrode length on the proposed device.