General results of investigation of the excess noise in optoelectronic devices and their application for improving the device performance

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95 Pub Date : 1995-11-27 DOI:10.1109/EDMO.1995.493690

N. Lukyanchikova

引用次数: 4

Abstract

The properties of the excess noise observed in a wide variety of optoelectronic devices based on homo- and heterojunctions in III-V and II-VI compounds are considered. It is shown that rather universal mechanism is responsible for this noise and its model is described. A number of technical applications of the results of measurements of this noise is presented and discussed.

查看原文本刊更多论文

光电器件中过量噪声研究的一般结果及其在提高器件性能中的应用

考虑了基于III-V和II-VI化合物的同质结和异质结的各种光电器件中观察到的过量噪声的性质。结果表明，这种噪声的产生具有相当普遍的机理，并对其模型进行了描述。介绍并讨论了该噪声测量结果的一些技术应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95

自引率

0.00%

发文量