A ultra-wideband CMOS PA with dummy filling for reliability

Abstract

This paper presents a V-band power amplifier in a bulk 65 nm CMOS technology with the peak gain 14.5 dB and 3-dB bandwidth of 28.8 GHz (50.8 GHz to 79.6 GHz). The PA has demonstrated 15.1 dBm Psat and 18.9 % peak PAE. The PA features three stage transformer coupled differential architecture with integrated input and output baluns. The entire PA core occupies 0.31 mm2 chip area and dissipates about 150 mW.