Conductive atomic force microscopy application on leaky contact analysis and characterization

Abstract

Conductive Atomic Force microscopy (C-AFM) is a popular technique for the electrical characterization of dielectric film and gate oxide integrity. In this article, C-AFM has been successfully applied to fault identification in contact level and the discrimination of various contact types. The current mapping of C-AFM can easily isolate faulty contacts. In addition, it also provide I/V curve for failure root cause judgment.