S. Rizzo, G. Scelba, G. Susinni, Domenico Paternostro, R. Scollo
{"title":"Comparison between innovative TO-247 IGBT copacked with SiC diode and SiC MOSFET in bidirectional boost converter","authors":"S. Rizzo, G. Scelba, G. Susinni, Domenico Paternostro, R. Scollo","doi":"10.1109/IESES45645.2020.9210699","DOIUrl":null,"url":null,"abstract":"Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter.","PeriodicalId":262855,"journal":{"name":"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)","volume":"36 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems (IESES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IESES45645.2020.9210699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Bidirectional DC/DC converters are very useful in different sustainable energy sectors, such as renewable energies, and electric mobility. In the last application, automotive-grade power devices are required because of the high reliability requested to the system. Recently, the first automotive-grade TO-247 IGBT copacked with SiC diode has been manufactured. In this work its performance has been firstly investigated in a bidirectional boost converter. A comparison with SiC MOSFET has been also carried out in order to provide useful guidelines in the design of this converter.