The Possibility of Creating a New Class of Frequency Converting Devices Based on The Bulk of AIIIBV Type Semiconductor Structures with Parameters Controlled by Strong Electric and Magnetic Fields

Abstract

The paper presents the calculations and research results of the complex conductivity components of AIIIBV type semiconductors structures determined using a phenomenological approach, which is based on the ratio for the inverse effective mass of charge carriers, obtained by decomposing into a Taylor series and limiting this series to two members, which greatly simplifies the final calculation algorithm. The relation for the complex low-signal microwave conductivity is obtained and its frequency characteristics are investigated. The case of the cumulative influence of electric and magnetic fields on the semiconductor is investigated, as a result it "splitting" of the maximum in the diffusion induction characteristic is revealed for large values of the magnetic field induction.