A. D. Smith, S. Vaziri, A. Delin, M. Ostling, M. Lemme
{"title":"Strain engineering in suspended graphene devices for pressure sensor applications","authors":"A. D. Smith, S. Vaziri, A. Delin, M. Ostling, M. Lemme","doi":"10.1109/ULIS.2012.6193347","DOIUrl":null,"url":null,"abstract":"The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"129 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193347","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
The present paper describes a device structure for controlling and measuring strain in graphene membranes. We propose to induce strain by creating a pressure difference between the inside and the outside of a cavity covered with a graphene membrane. The combination of tight-binding calculations and a COMSOL model predicts strain induced band gaps in graphene for certain conditions and provides a guideline for potential device layouts. Raman spectroscopy on fabricated devices indicates the feasibility of this approach. Ultimately, pressure-induced band structure changes could be detected electrically, suggesting an application as ultra-sensitive pressure sensors.