Amorphous-crystalline silicon heterojunction solar cells formed by the DC saddle field PECVD system: A deposition parameter optimization

K. Leong, A. Gougam, B. Bahardoust, Wing Yin Kwong, T. Kosteski, D. Yeghikyan, S. Zukotynski, N. Kherani
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引用次数: 2

Abstract

The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressure, gas phase dopant concentration for the p-type a-Si:H (a-Si:H(p+)) emitter, and substrate temperature were varied. The substrate temperature was found to be a critical parameter for the deposition of intrinsic a-Si:H as epitaxial formation can occur with just a temperature increase of 10°C. The processing capabilities have been developed to construct ACSHJ solar cells with 15.5% conversion efficiency for a 4.2 cm2 area.
直流鞍场PECVD系统制备非晶硅异质结太阳能电池:沉积参数优化
采用直流鞍场PECVD系统沉积氢化非晶硅(a-Si:H)层,制备高效非晶硅异质结(ACSHJ)太阳能电池。等离子体控制参数;包括室压、p型a-Si:H(a-Si:H(p+))发射极气相掺杂浓度和衬底温度的变化。发现衬底温度是沉积本征a- si:H的关键参数,因为只要温度升高10°C就可以发生外延形成。在4.2平方厘米的面积上,ACSHJ太阳能电池的转换效率为15.5%。
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