K. Leong, A. Gougam, B. Bahardoust, Wing Yin Kwong, T. Kosteski, D. Yeghikyan, S. Zukotynski, N. Kherani
{"title":"Amorphous-crystalline silicon heterojunction solar cells formed by the DC saddle field PECVD system: A deposition parameter optimization","authors":"K. Leong, A. Gougam, B. Bahardoust, Wing Yin Kwong, T. Kosteski, D. Yeghikyan, S. Zukotynski, N. Kherani","doi":"10.1109/PVSC.2011.6186238","DOIUrl":null,"url":null,"abstract":"The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressure, gas phase dopant concentration for the p-type a-Si:H (a-Si:H(p+)) emitter, and substrate temperature were varied. The substrate temperature was found to be a critical parameter for the deposition of intrinsic a-Si:H as epitaxial formation can occur with just a temperature increase of 10°C. The processing capabilities have been developed to construct ACSHJ solar cells with 15.5% conversion efficiency for a 4.2 cm2 area.","PeriodicalId":373149,"journal":{"name":"2011 37th IEEE Photovoltaic Specialists Conference","volume":"10 3","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 37th IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.2011.6186238","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
The DC Saddle Field PECVD system was used to deposit hydrogenated amorphous silicon (a-Si:H) layers for high efficiency amorphous-crystalline silicon heterojunction (ACSHJ) solar cells. The plasma controlling parameters; including the chamber pressure, gas phase dopant concentration for the p-type a-Si:H (a-Si:H(p+)) emitter, and substrate temperature were varied. The substrate temperature was found to be a critical parameter for the deposition of intrinsic a-Si:H as epitaxial formation can occur with just a temperature increase of 10°C. The processing capabilities have been developed to construct ACSHJ solar cells with 15.5% conversion efficiency for a 4.2 cm2 area.