Low Temperature Properties of Organic-Inorganic Ag / p-CuPc/ n-GaAs / Ag Photoelectric Sensor

2006 IEEE International Multitopic Conference Pub Date : 2006-12-01 DOI:10.1109/INMIC.2006.358215

K.S. Karimova, I. Qazi, M. Fedorov, T. A. Khan, U. Shafique

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引用次数: 3

Abstract

A thin organic film of p-type semiconducting copper phthalocynanine (CuPc) was deposited by vacuum evaporation on an n-type GaAs single-crystal semiconductor substrate. The fabricated Ag/CuPc/n-GaAs/Ag sensor was carried through an ageing process to stabilize the parameters. Voltage-current characteristics and photoelectrical response of the sensor were investigated at a wide temperature interval of 82 K to 350 K. Photoelectric characteristics were measured under nonmodulated filament-lamp illumination. It was observed that sensor parameters such as: rectification ratio; threshold voltage; junction, shunt and series resistances; open-circuit voltage and short circuit current are temperature dependent. It was found that wide-range voltage-current characteristics of the sensor may be described similar to that of a Schottky barrier diode. Using the experimental data on voltage-current characteristics and absorbance of the CuPc films the energy-band diagram of the p-CuPc/n-GaAs heterojunction was developed. It was shown that data obtained from simulation of an equivalent circuit of photoelectric sensor agreed with experimental results.

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有机-无机Ag / p-CuPc/ n-GaAs / Ag光电传感器的低温性能

采用真空蒸发的方法在n型砷化镓单晶半导体衬底上制备了p型半导体酞菁铜(CuPc)薄膜。对制备的Ag/CuPc/n-GaAs/Ag传感器进行了老化处理，以稳定传感器参数。研究了传感器在82 ~ 350 K宽温度范围内的电压-电流特性和光电响应。测量了非调制白炽灯照明下的光电特性。观察到传感器参数如:整流比;阈值电压;结电阻、并联电阻和串联电阻;开路电压和短路电流与温度有关。发现传感器的宽范围电压电流特性可以描述为类似于肖特基势垒二极管的特性。利用CuPc薄膜的电压电流特性和吸光度实验数据，建立了p-CuPc/n-GaAs异质结的能带图。结果表明，光电传感器等效电路的仿真结果与实验结果吻合较好。

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2006 IEEE International Multitopic Conference

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