Multi band sensing with arsenides and nitrides

Abstract

Infrared sensing covering the spectral ranges from ultraviolet (UV) to infrared (IR) are demonstrated with arsenide and nitride semiconductor structures. The use of a heterojunction structure allows the utilization of both the inter-band and inter-valence band transitions in one detector architecture for detecting UV and IR. Simultaneous detection or selection in different spectral bands using applied bias is also demonstrated. Various quantum structures using Quantum Rings, dots, and wells will also be discussed.