Selection of SRAM Cells to improve Reliable PUF implementation using Cell Mismatch Metric

A. Alheyasat, G. Torrens, S. Bota, B. Alorda
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引用次数: 1

Abstract

Physically Unclonable Functions (PUFs) are low-cost cryptographic primitives implemented in secret key generation and device authentication strategies. SRAM-PUFs are widely well-known as entropy source; however, they mainly experience a low reproducibility of the challenge-response pair because of non-deterministic noise conditions during the process of power-up. The reliability of SRAM-PUFs achieved these days comes by using complex error correcting codes (ECCs) combined with Fuzzy extractor structures introducing an increment in terms of power consumption, area cost and complexity of the design. In this paper we define an effective metric to classify the SRAM cells identifying the most reliable cells generating high reproductible responses for the PUF implementation and, identifying the most unpredictable ones for Random Number Generator (RNG). This metric is obtained from the mismatch between the cell’s inverters and the start-up behavior. Also, the noise in the PUF is modeled to validate the classification results obtained by the proposed metric. The proposed metric can be used during SRAM PUF design to explore the impact on reliable cells significantly increasing the reproducibility of the PUF and minimizing the dependability on ECCs and Fuzzy extractor.
使用单元失配度量来选择SRAM单元以提高可靠的PUF实现
物理不可克隆函数(puf)是在密钥生成和设备身份验证策略中实现的低成本加密原语。SRAM-PUFs是众所周知的熵源;然而,由于在上电过程中存在不确定的噪声条件,它们的挑战-响应对的再现性较低。目前,sram - puf的可靠性是通过使用复杂的纠错码(ecc)和模糊提取器结构来实现的,这在功耗、面积成本和设计复杂性方面带来了增加。在本文中,我们定义了一个有效的度量来对SRAM单元进行分类,识别最可靠的单元,为PUF实现产生高可重复性响应,并识别最不可预测的随机数生成器(RNG)。该指标是由电池逆变器和启动行为之间的不匹配获得的。此外,还对PUF中的噪声进行了建模,以验证所提出度量所获得的分类结果。该指标可用于SRAM PUF设计,以探索对可靠细胞的影响,显著提高PUF的可重复性,并最大限度地降低对ECCs和模糊提取器的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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