Characterization of delta-doped GaAs grown by MOVPE

Abstract

The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (/spl delta/)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.