Production of 150 NM T-gate on basis of Ti/Mo/Cu for p-HEMT

2010 20th International Crimean Conference "Microwave & Telecommunication Technology" Pub Date : 2010-11-11 DOI:10.1109/CRMICO.2010.5632990

E. Anichenko, E. Erofeev, S. Ishutkin, V. A. Kagadei, K. S. Nosaeva

引用次数: 1

Abstract

Technology of manufacturing of 0,15 μm T-gate Ti/Mo/Cu on heterostructure GaAs/AlGaAs/InGaAs using the electron-beam lithography in the tri-layer resist mask 950PMMA/ LOR 5B/ 495PMMA is described in the work.

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基于Ti/Mo/Cu制备150 NM p-HEMT t栅

介绍了利用电子束光刻技术在异质结构GaAs/AlGaAs/InGaAs上制备0.15 μm t栅Ti/Mo/Cu的技术，该技术采用950PMMA/ LOR 5B/ 495PMMA三层掩模。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 20th International Crimean Conference "Microwave & Telecommunication Technology"

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