Integrated passive devices on the selectively anodized aluminum oxide

Abstract

By using selectively anodized aluminium, various IPDs (Integrated Passive Devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (Insertion Loss) respectively with small size.