A Fully Integrated 30-to-160GHz Coherent Detector with a Broadband Frequency Comb in 65nm CMOS

Babak Jamali, A. Babakhani
{"title":"A Fully Integrated 30-to-160GHz Coherent Detector with a Broadband Frequency Comb in 65nm CMOS","authors":"Babak Jamali, A. Babakhani","doi":"10.23919/EuMIC.2019.8909574","DOIUrl":null,"url":null,"abstract":"This paper presents a broadband millimetre-wave coherent detector that uses an on-chip frequency comb with a tunable repetition frequency as a high-precision frequency ruler. A heterodyne MOSFET detector mixes the received signal with the reference comb and downconverts it to an intermediate-frequency signal below 2 GHz. The receiver is able to detect signals from 30 to 160 GHz with a 2-Hz resolution. The detector chip is fabricated in TSMC 65-nm CMOS technology, occupies an area of 0.56 mm2, and consumes 34 mW dc power.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"61 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909574","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents a broadband millimetre-wave coherent detector that uses an on-chip frequency comb with a tunable repetition frequency as a high-precision frequency ruler. A heterodyne MOSFET detector mixes the received signal with the reference comb and downconverts it to an intermediate-frequency signal below 2 GHz. The receiver is able to detect signals from 30 to 160 GHz with a 2-Hz resolution. The detector chip is fabricated in TSMC 65-nm CMOS technology, occupies an area of 0.56 mm2, and consumes 34 mW dc power.
基于65nm CMOS的全集成30- 160ghz宽带频率梳相干探测器
本文提出了一种宽带毫米波相干探测器,该探测器采用片上频率梳作为高精度频率尺,其重复频率可调。外差MOSFET探测器将接收到的信号与参考梳混合,并将其下变频为低于2ghz的中频信号。接收器能够以2赫兹的分辨率检测30至160 GHz的信号。探测器芯片采用台积电65nm CMOS工艺制造,占地面积0.56 mm2,直流功耗34 mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信