A wavelet based method for modeling and simulation of a SiC BJT

Abstract

This paper focuses on the modeling and simulation of silicon carbide(SiC) bipolar junction transistor(BJT). SiC BJT is modeled in MATLAB using internal dynamical equation, and the Haar wavelet method is used to solve the ambipolar diffusion equation (ADE). The simulation results of switching waveforms of SiC BJT are given, which verify the validity of this method.