Carrier type control of MX2 type 2D materials for functionality-enhanced transistors

Abstract

The book chapter highlights the application of MX2 type 2D materials to the polarity-controllable transistors, especially focused on the polarity control of carriers injected into TMDC materials. One of the bottlenecks in realization of polarity-controllable transistors consists in carrier injection of both electrons and holes into intrinsic semiconductor channel through Schottky junctions, and therefore, a novel method overcoming this bottleneck had been desired. Here, it was reviewed that the new kind of semiconducting materials of TMDCs has a promising feature for this purpose, and also, MoTe2, which is one of the TMDC family, has a great potential for polarity controllable transistors for its weak Fermi level pinning effect.