{"title":"A 1.12pJ/b resonance compensated inductive transceiver with a fault-tolerant network controller for wearable body sensor networks","authors":"J. Yoo, Seulki Lee, H. Yoo","doi":"10.1109/ASSCC.2008.4708790","DOIUrl":null,"url":null,"abstract":"A low-energy inductive coupling link with a low energy fault-tolerant wearable body sensor network (BSN) controller is proposed to realize intra- and cross-layer wearable network at once. The intra-layer switch adopts the hybrid routing scheme to achieve fault-tolerance, and the cross-layer inductive transceiver employs the resonance compensator with an on-chip capacitor bank and a variable hysteresis Schmitt-Trigger to compensate dynamic and static variances of an woven inductor, achieving 10 Mbps wireless transaction with the reception energy of 1.12pJ/b at 2.5 V supply in 0.25 mum 1P5M CMOS.","PeriodicalId":143173,"journal":{"name":"2008 IEEE Asian Solid-State Circuits Conference","volume":"118 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2008.4708790","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12
Abstract
A low-energy inductive coupling link with a low energy fault-tolerant wearable body sensor network (BSN) controller is proposed to realize intra- and cross-layer wearable network at once. The intra-layer switch adopts the hybrid routing scheme to achieve fault-tolerance, and the cross-layer inductive transceiver employs the resonance compensator with an on-chip capacitor bank and a variable hysteresis Schmitt-Trigger to compensate dynamic and static variances of an woven inductor, achieving 10 Mbps wireless transaction with the reception energy of 1.12pJ/b at 2.5 V supply in 0.25 mum 1P5M CMOS.