Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide

Abstract

In this work, we present the first experimental determination of nucleation time and domain wall (DW) velocity by studying switching dynamics of ferroelectric (FE) hafnium zirconium oxide (HZO). Experimental data and simulation results were used to quantitatively study the switching dynamics. The switch speed is degraded in high aspect ratio devices due to the longer DW propagation time or with dielectric interfacial layer due to the required additional tunneling and trapping time by the leakage current assist switch mechanism.