Multi-chip Module Based GaAs MMICs Packaging for L-Band High Gain Application

Ravi Gugulothu, S. Bhalke, A. A. Naik, L. K, R. Dasari
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引用次数: 3

Abstract

this paper details a multi-chip module (MCM) suitable for GaAs monolithic microwave integrated circuit common control high gain block MCM package design, 3D EM simulation of the package, package fabrication and end module level execution, which includes assembly and testing under various environmental test conditions as per the space standards. This MCM package designed using three internally separated cavities for individual cavity isolation, 4-RF Ports, 10mil thin film microstrip line and optimized wire bonding interconnects, and the same package is EM simulated using a CST microwave studio. This package modelled and fabricated using kovar material. This MCM package proposed to house a chain of four amplifiers with a common gain of 69dB, 2 SPDT switches with insertion loss of 3.6dB, a digital attenuator with initial attenuation of 2.5dB with TTL driver and 2 thermopads of 3dB individual attenuation. This package resonating frequency is 7.484GHz. The packaged MCM measurements are carried out over a frequency of 1.1GHz-1.4GHz and resulted with S21 of 60dB, S11&S22 of better than 15dB and P1dB out of 15dBm.
基于多芯片模块的l波段高增益GaAs mmic封装
本文详细介绍了一种适用于GaAs单片微波集成电路的通用控制高增益块MCM封装设计、封装三维仿真、封装制作和端模块级执行,包括按照空间标准在各种环境测试条件下的组装和测试。该MCM封装采用三个内部分离的腔体,用于单独的腔体隔离,4个rf端口,10mil薄膜微带线和优化的线键合互连,并且使用CST微波工作室对同一封装进行了EM模拟。这个包建模和制造使用科瓦材料。该MCM封装提议容纳一个由四个放大器组成的链,共同增益为69dB, 2个插入损耗为3.6dB的SPDT开关,一个带有TTL驱动器的初始衰减为2.5dB的数字衰减器和2个单独衰减为3dB的热敏片。该封装谐振频率为7.484GHz。封装的MCM测量在1.1GHz-1.4GHz的频率上进行,结果S21为60dB, s11和s22优于15dB, P1dB为15dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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