Compact K-band Watt-level GaAs PHEMT Power Amplifier MMIC with integrated ESD protection

A. Bessemoulin, M. G. McCulloch, A. Alexander, D. Mccann, S. Mahon, J. Harvey
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引用次数: 10

Abstract

The performance of a compact K-band power amplifier MMIC fabricated in standard 6-inch 0.15-mum GaAs power PHEMT technology is reported. The circuit features on-chip ESD protection including input short-circuit stub, dual capacitors at RF ports and high-current diode arrays on each gate pad. Occupying less than 3 mm2, this 3-stage power amplifier achieves a linear gain of more than 20-dB over the 17 to 24 GHz frequency range with 6-dB noise figure. It also delivers a CW output power of more than 29-and 30-dBm, in the 17-20 GHz band, at 5- and 6-V respectively. Preliminary ESD characterization shows the circuit withstands 180-V in human body model test (tester limit), and 100-V machine model (equivalent to at least 500-V HBM), without DC or RF performance degradation. Finally, performance in standard 24-lead plastic QFN package (4times4 mm2) is presented: the device exhibits more than 17.5-dB linear gain over 17-24 GHz, with P-.1dB greater than 28-dBm in the 17.7-19.7 GHz radio range
紧凑型k波段瓦特级GaAs PHEMT功率放大器MMIC集成ESD保护
报道了采用标准6英寸0.15 μ m GaAs功率PHEMT技术制作的紧凑型k波段功率放大器MMIC的性能。该电路具有片内ESD保护功能,包括输入短路存根、射频端口的双电容和每个门垫上的大电流二极管阵列。这款3级功率放大器占地面积小于3平方毫米,在17至24 GHz频率范围内实现了超过20 db的线性增益,噪声系数为6 db。它还在17-20 GHz频段分别以5- v和6-V提供超过29和30 dbm的连续波输出功率。初步的ESD特性表明,该电路在人体模型测试(测试仪极限)和100 v机器模型测试(至少相当于500 v HBM)中承受180 v,没有DC或RF性能下降。最后,介绍了标准24引脚塑料QFN封装(4times4 mm2)的性能:该器件在17-24 GHz范围内具有17.5 db以上的线性增益,P-。在17.7-19.7 GHz无线电范围内,比28dbm大1dB
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