{"title":"A Digitally Calibrated Current-Voltage Feedback Transconductor in 0.13-μm CMOS Process","authors":"Ying-Zu Lin, Yen-Ting Liu, Soon-Jyh Chang","doi":"10.1109/ASSCC.2006.357875","DOIUrl":null,"url":null,"abstract":"A digitally calibrated transconductor for high-speed operation with its linearity enhanced by negative feedback is proposed. This voltage-to-current converter is mainly composed of two parts: an operational transconductance amplifier (OTA) and a pair of feedback resistors. The measured spurious free dynamic range (SFDR) of the transconductor is 72.6 dB when the input frequency is 100 MHz. To compensate common-mode deviation due to process variation, digital calibration circuits are added. Fabricated in TSMC 0.13-μm CMOS process, the transconductor occupies 250 × 200 μm2 active area and consumes 5.06 mW from a 1.2-V supply.","PeriodicalId":142478,"journal":{"name":"2006 IEEE Asian Solid-State Circuits Conference","volume":"213 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Asian Solid-State Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2006.357875","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A digitally calibrated transconductor for high-speed operation with its linearity enhanced by negative feedback is proposed. This voltage-to-current converter is mainly composed of two parts: an operational transconductance amplifier (OTA) and a pair of feedback resistors. The measured spurious free dynamic range (SFDR) of the transconductor is 72.6 dB when the input frequency is 100 MHz. To compensate common-mode deviation due to process variation, digital calibration circuits are added. Fabricated in TSMC 0.13-μm CMOS process, the transconductor occupies 250 × 200 μm2 active area and consumes 5.06 mW from a 1.2-V supply.