{"title":"A base excitation device with PZT for MEMS dynamic testing under high temperature environment","authors":"D. She, Yiliu Yang","doi":"10.1109/ICMC.2014.7231668","DOIUrl":null,"url":null,"abstract":"In order to excite silicon microcantilevers under the temperature ranging from room temperature to 500°C, an impact base excitation device was developed. In excitation device, an electric heating plate is used as the heating element to heat the testing microstructure. A separated structure was designed to protect the piezoelectric ceramic apart from the damage due to the high temperature. Using the developed excitation device, silicon microcantilevers were excited under 500°C. The impulse response signals of the silicon microcantilevers were obtained by a Laser Doppler Vibrometer. The dynamic characteristics of the silicon microcantilevers have been studied. The results show that the designed excitation device is effective to excite the silicon cantilevers under the high temperature environment.","PeriodicalId":104511,"journal":{"name":"2014 International Conference on Mechatronics and Control (ICMC)","volume":"150 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 International Conference on Mechatronics and Control (ICMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMC.2014.7231668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In order to excite silicon microcantilevers under the temperature ranging from room temperature to 500°C, an impact base excitation device was developed. In excitation device, an electric heating plate is used as the heating element to heat the testing microstructure. A separated structure was designed to protect the piezoelectric ceramic apart from the damage due to the high temperature. Using the developed excitation device, silicon microcantilevers were excited under 500°C. The impulse response signals of the silicon microcantilevers were obtained by a Laser Doppler Vibrometer. The dynamic characteristics of the silicon microcantilevers have been studied. The results show that the designed excitation device is effective to excite the silicon cantilevers under the high temperature environment.