F. F. Ince, A. T. Newell, K. Reilly, S. Seth, T. Rotter, A. Mansoori, S. Addamane, D. Shima, L. Miroshnik, B. Rummel, A. Li, T. Sinno, S.M. Han, G. Balakrishnan
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引用次数: 0
Abstract
We present the growth of In0.53Ga0.47Sb on InP using the interfacial misfit dislocation growth mode. The growth is performed by using an intermediate InGaAs layer and achieving an As for Sb anion exchange. Characterization results show the formation of an interfacial misfit dislocation array, however the epilayer shows significant phase segregation.
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