The progress of the ALIVH substrate

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345) Pub Date : 2002-08-07 DOI:10.1109/ECTC.2002.1008292

D. Andoh, Y. Tomita, T. Nakamura, F. Echigo

{"title":"The progress of the ALIVH substrate","authors":"D. Andoh, Y. Tomita, T. Nakamura, F. Echigo","doi":"10.1109/ECTC.2002.1008292","DOIUrl":null,"url":null,"abstract":"The next generation ALIVH substrates were developed named ALIVH G-type for the motherboard use and ALIVH-FB for semiconductor package use. The ALIVH G-type has lower moisture absorption and higher rigidity than the conventional ALIVH. The insulator material of conventional ALIVH is a non-woven aramid-epoxy prepreg. On the other hand, the ALIVH G-type uses glass-epoxy prepreg. We developed the resin flow control technology during the hot press lamination process for hindering the conductive particle in the via paste diffusion. We expect to realize the halogen free ALIVH and liberate the ALIVH from the moisture control, using the glass-epoxy prepreg. The ALIVH-FB has the same structure as the ALIVH. The design rule is minimised for the semiconductor package. The design rule of ALIVH-FB is Line/Space=25/25 /spl mu/m and Via Diameter/Land Diameter=50/150 /spl mu/m. The ALIVH-FB uses three new technologies of: (1) film insulator; (2) YAG THG laser drilling process; and (3) accurate alignment process. The ALIVH-FB is very suitable for semiconductor package use by the fine via on via structure and the properties of the film insulator.","PeriodicalId":285713,"journal":{"name":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECTC.2002.1008292","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

Abstract

The next generation ALIVH substrates were developed named ALIVH G-type for the motherboard use and ALIVH-FB for semiconductor package use. The ALIVH G-type has lower moisture absorption and higher rigidity than the conventional ALIVH. The insulator material of conventional ALIVH is a non-woven aramid-epoxy prepreg. On the other hand, the ALIVH G-type uses glass-epoxy prepreg. We developed the resin flow control technology during the hot press lamination process for hindering the conductive particle in the via paste diffusion. We expect to realize the halogen free ALIVH and liberate the ALIVH from the moisture control, using the glass-epoxy prepreg. The ALIVH-FB has the same structure as the ALIVH. The design rule is minimised for the semiconductor package. The design rule of ALIVH-FB is Line/Space=25/25 /spl mu/m and Via Diameter/Land Diameter=50/150 /spl mu/m. The ALIVH-FB uses three new technologies of: (1) film insulator; (2) YAG THG laser drilling process; and (3) accurate alignment process. The ALIVH-FB is very suitable for semiconductor package use by the fine via on via structure and the properties of the film insulator.

查看原文本刊更多论文

ALIVH基板的研究进展

下一代ALIVH基板被命名为ALIVH g型用于主板，ALIVH- fb用于半导体封装。与传统ALIVH相比，ALIVH g型吸湿性更低，刚性更高。传统ALIVH的绝缘子材料为无纺布芳纶-环氧预浸料。另一方面，ALIVH g型使用玻璃环氧预浸料。研究了热压复合过程中的树脂流动控制技术，以阻止导电颗粒在通过浆料中的扩散。我们期望利用玻璃-环氧预浸料实现无卤素ALIVH，并将ALIVH从水分控制中解放出来。ALIVH- fb具有与ALIVH相同的结构。对于半导体封装，设计规则是最小化的。ALIVH-FB的设计原则是线/间距=25/25 /亩/米，通径/地径=50/150 /亩/米。ALIVH-FB采用了三种新技术:(1)薄膜绝缘体;(2) YAG THG激光打孔工艺;(3)精确的对准工艺。ALIVH-FB由于其优良的通孔结构和薄膜绝缘体的性能，非常适合半导体封装使用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

52nd Electronic Components and Technology Conference 2002. (Cat. No.02CH37345)

自引率

0.00%

发文量