Comparison of Class C and High Efficiency Class E Amplifiers at 435 MHz

Erik Herceg, T. Urbanec
{"title":"Comparison of Class C and High Efficiency Class E Amplifiers at 435 MHz","authors":"Erik Herceg, T. Urbanec","doi":"10.1109/RADIOELEK.2019.8733545","DOIUrl":null,"url":null,"abstract":"This article deals with the comparison of class C and class E amplifiers designed with an identical transistor, substrate, and frequency. Both types of amplifiers have a theoretical efficiency of 100 %; however, more attention is paid to class E amplifier, because of its complexity and difficulty of design. The efficiency of both classes reached over 75 %. The working frequency of designed amplifiers was 435 MHz using lumped components. The topology of the class C amplifier is typical with input and output filter matching at the fundamental frequency, and the design of the class E amplifier is with shunt capacitance complemented with series resonant circuit fundamentally tuned. Class E amplifier with a shunt capacitance designed with E-pHEMT transistor is unique, because of small drain voltage which has a distinct influence on switching capacitor value which resulted in hundredths to units of picofarads. The amplifiers were simulated, manufactured and measured results were compared. The class E amplifier is therefore presented at such frequency where transmission lines cannot be used because of their length and even the lumped resonators tuned to higher harmonics frequency start to be undesignable.","PeriodicalId":336454,"journal":{"name":"2019 29th International Conference Radioelektronika (RADIOELEKTRONIKA)","volume":"102 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 29th International Conference Radioelektronika (RADIOELEKTRONIKA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADIOELEK.2019.8733545","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This article deals with the comparison of class C and class E amplifiers designed with an identical transistor, substrate, and frequency. Both types of amplifiers have a theoretical efficiency of 100 %; however, more attention is paid to class E amplifier, because of its complexity and difficulty of design. The efficiency of both classes reached over 75 %. The working frequency of designed amplifiers was 435 MHz using lumped components. The topology of the class C amplifier is typical with input and output filter matching at the fundamental frequency, and the design of the class E amplifier is with shunt capacitance complemented with series resonant circuit fundamentally tuned. Class E amplifier with a shunt capacitance designed with E-pHEMT transistor is unique, because of small drain voltage which has a distinct influence on switching capacitor value which resulted in hundredths to units of picofarads. The amplifiers were simulated, manufactured and measured results were compared. The class E amplifier is therefore presented at such frequency where transmission lines cannot be used because of their length and even the lumped resonators tuned to higher harmonics frequency start to be undesignable.
435 MHz时C类和高效E类放大器的比较
本文讨论了采用相同晶体管、衬底和频率设计的C类和E类放大器的比较。两种类型的放大器都有100%的理论效率;然而,由于E类放大器的复杂性和设计难度,其设计越来越受到人们的关注。两个班的效率都达到了75%以上。采用集总元件设计的放大器工作频率为435 MHz。C类放大器的拓扑结构是典型的输入和输出滤波器在基频匹配,E类放大器的设计是并联电容辅以基频调谐的串联谐振电路。用E- phemt晶体管设计并联电容的E类放大器是独一无二的,因为漏极电压小,对开关电容值有明显的影响,导致百分之一到单位皮帕。仿真、制造和测量结果进行了比较。因此,E类放大器呈现在这样的频率,传输线不能使用,因为他们的长度,甚至集中谐振器调谐到更高的谐波频率开始是不可设计的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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