The Degradation Mechanism and Similar Characterization for IGBT

Abstract

Insulated-gate bipolar transistors (IGBT) are widely used in power electronic systems. The reliability of their operation is very important for social life. The detection of key Degradation characteristic parameters is an important technical basis to realize the fault pre-diagnosis of power electronic systems, which is of great significance to improve the stability of power electronic systems. In this paper, various degradation types of power electronic devices are firstly introduced, and the mechanisms of degradation are discussed in detail. Secondly, the feasibility of degradation characterization based on key characteristic parameters (voltage rise time) is studied. It is shown that the evolution of each degradation can be represented by a key characteristic parameter (voltage rise time), and ultimately by a similar junction temperature shift. Finally, the development prospects of multiple degradation pre-diagnosis based on key parameters are prospected.