High efficient approach to utilize SiC MOSFET potential in power modules

Abstract

A holistic approach taking benefit from optimization of chip, assembly technology and module design was utilized to exploit the performance potential of SiC power modules. A novel MOSFET SiC module (1200V, 400A) with extremely low inductance (1.4nH) was designed and assembled using Semikron DPD (Direct Pressed Die) technology. The electrical measurements showed excellent switching performance (switching speed up to ∼53kV/μs for dv/dt and ∼67kA/μs for di/dt) and very low energy losses (80% lower than state of the art Si based IGBT module). The enhanced reliability was demonstrated by power cycling tests (8–10x life time improvement compared to conventional assembly of SiC devices).