Experimental characterization of a non linear electrostatic quadripole: application to insulated gate power components

Abstract

Switching of insulated gate semiconductors (MOSFET, IGBT, ...) is dominated by electrostatic properties. Unfortunately, current manufacturer datasheets do not include relevant information to accurately forecast transients waveforms. First, a non linear electrostatic quadripole is studied from a theoretical point of view. This short but rigorous analysis allows the reader to understand why supplied data are not relevant. Second, a novel method of experimental characterisation is proposed. It leads to a more complete description of the electrostatic behaviour of such a component. Finally, transient waveforms are acquired on a simple circuit including a switch and they are compared to simulated ones. Benefit of the improved characterisation, then, becomes obvious.