Layer-by-Layer Synthesis and Analysis of the the Phase Composition of Cdx TeyOz/CdS/por-ZnO/ZnO Heterostructure

2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek) Pub Date : 2022-10-03 DOI:10.1109/KhPIWeek57572.2022.9916492

S. Kovachov, I. Bohdanov, Z. Karipbayev, Y. Suchikova, Tamara Tsebriienko, Anatoli I. Popov

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引用次数: 3

Abstract

Cdx TeyOz/CdS/por-ZnO/ZnO heterostructures were synthesized using a combination of electrochemical etching followed by the ion layer adsorption and reaction method (SILAR). Electrochemical etching was applied to form a porous ZnO layer. Chemical deposition from the electrolyte solution was carried out to form CdS and CdxTeyOzfilms. The phase composition of the obtained heterostructures was characterized using XRD and Raman methods. We have demonstrated that the CdxTeyOzfilm consists of different phase configurations, depending on the concentration of each element. The extreme cases are the formation of CdxOzand TeyOz. Furthermore, the formation of complex CdTeO3CdTe3O8oxides is observed. Such structures have prospects for wide application in electronic devices due to the ability to adjust the phase and component composition.

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Cdx TeyOz/CdS/por-ZnO/ZnO异质结构的逐层合成与相组成分析

采用电化学刻蚀-离子层吸附-反应相结合的方法合成了Cdx TeyOz/CdS/por-ZnO/ZnO异质结构。采用电化学刻蚀法制备多孔氧化锌层。在电解液中进行化学沉积，形成CdS和cdxteyoz薄膜。采用XRD和Raman方法对所得异质结构的相组成进行了表征。我们已经证明了cdxteyoz膜由不同的相构型组成，这取决于每个元素的浓度。极端的例子是cdxz和TeyOz的形成。此外，还观察到络合物cdteo3cdte3o8氧化物的形成。由于这种结构具有调节相位和元件组成的能力，在电子器件中具有广泛的应用前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2022 IEEE 3rd KhPI Week on Advanced Technology (KhPIWeek)

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