22–33 GHz CMOS LNA Using Coupled-TL Feedback and Body Self-Forward-Bias for 28 GHz 5G System

Abstract

We report a 22–33 GHz low-noise amplifier (LNA) with low power dissipation (PD), low noise-figure (NF) and small group-delay (GD) variation in 90 nm CMOS for 28 GHz 5G system. Current-reused and body self-forward-bias (BSFB) techniques are used for low PD. Compact quarter-wavelength (λ/4) spiral transmission-line (TL) in conjunction with a large bypass capacitor is used for gate-bias and simultaneous drain-bias and current-source. Coupled-TL feedback and BSFB techniques are used for gain and NF enhancement in the condition of the same PD. The LNA dissipates 12.2 mW and achieves decent S21 of 16 dB, 3 dB bandwidth (f3dB) of 11 GHz (22–33 GHz), minimum NF (NFmin) of 2.5 dB, average NF (NFavg) of 3.1 dB and GD variation of ±6 ps for 22–33 GHz, and figure-of-merit (FOM) of 91.7 GHz. Furthermore, the LNA occupies 0.406 mm2 chip area, and attains decent input third-order intercept point (IIP3) of -3 dBm at 28 GHz. The NF and FOM are one of the best performances ever demonstrated for Ka-band CMOS LNAs with f3dB wider than 5 GHz and PD lower than 14 mW.