Performance analysis and optimization for silicon interposer with Through Silicon Via (TSV)

Namhoon Kim, C. Shin, D. Wu, Joong-Ho Kim, P. Wu
{"title":"Performance analysis and optimization for silicon interposer with Through Silicon Via (TSV)","authors":"Namhoon Kim, C. Shin, D. Wu, Joong-Ho Kim, P. Wu","doi":"10.1109/SOI.2012.6404390","DOIUrl":null,"url":null,"abstract":"In this paper, the stacked silicon interconnect technology in FPGA system is introduced, which needs to be accurately modelled over high frequency by considering numerous design requirements. The stacked silicon interposer includes a lot of TSVs for high speed signals. Designs without the consideration of high frequency effects of TSV will degrade the rise/fall time of a signal, increase crosstalk and noise injection, and cause significant performance degradation on high speed channels. The routing metal loss in Under Bump Metallurgy (UBM) layer is also analyzed and simulated. Performance enhancement by using SOI wafer is shown and compared against conventional wafers.","PeriodicalId":306839,"journal":{"name":"2012 IEEE International SOI Conference (SOI)","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2012.6404390","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4

Abstract

In this paper, the stacked silicon interconnect technology in FPGA system is introduced, which needs to be accurately modelled over high frequency by considering numerous design requirements. The stacked silicon interposer includes a lot of TSVs for high speed signals. Designs without the consideration of high frequency effects of TSV will degrade the rise/fall time of a signal, increase crosstalk and noise injection, and cause significant performance degradation on high speed channels. The routing metal loss in Under Bump Metallurgy (UBM) layer is also analyzed and simulated. Performance enhancement by using SOI wafer is shown and compared against conventional wafers.
全硅通孔(TSV)硅中间体性能分析与优化
本文介绍了FPGA系统中的堆叠硅互连技术,考虑到众多的设计要求,该技术需要在高频率下精确建模。堆叠式硅中间层包括许多用于高速信号的tsv。不考虑TSV高频效应的设计将降低信号的上升/下降时间,增加串扰和噪声注入,并在高速通道上导致显着的性能下降。并对凹凸下冶金(UBM)层中走线金属的损耗进行了分析和模拟。采用SOI晶圆提高了性能,并与传统晶圆进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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