An 80 Gb/s SiGe BiCMOS fully differential variable gain stage in a digitally-controlled adaptive equalizer for high speed serial electrical communication
{"title":"An 80 Gb/s SiGe BiCMOS fully differential variable gain stage in a digitally-controlled adaptive equalizer for high speed serial electrical communication","authors":"Y. Ban","doi":"10.1109/ICAM.2017.8242192","DOIUrl":null,"url":null,"abstract":"This paper presents the design, trade-off of a very high bandwidth variable gain stage, and the practical limits during its implementation as a tunable gain cell in the high speed equalizer for next generation serial electrical / optical communication links. The variable gain stage presented in this work, achieves a bandwidth of above 50 GHz and a tunable gain range of 40 dB. With a very high input and output impedance, it could be used in the equalizer with the input data streams up to 80 Gb/s. The variable gain stage is designed in an 130 nm SiGe BiCMOS technology, with an active area of 0.04 mm2 and a power consumption of 30 mW from a 2.5 V supply.","PeriodicalId":117801,"journal":{"name":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"12 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 2nd IEEE International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAM.2017.8242192","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the design, trade-off of a very high bandwidth variable gain stage, and the practical limits during its implementation as a tunable gain cell in the high speed equalizer for next generation serial electrical / optical communication links. The variable gain stage presented in this work, achieves a bandwidth of above 50 GHz and a tunable gain range of 40 dB. With a very high input and output impedance, it could be used in the equalizer with the input data streams up to 80 Gb/s. The variable gain stage is designed in an 130 nm SiGe BiCMOS technology, with an active area of 0.04 mm2 and a power consumption of 30 mW from a 2.5 V supply.