Analysis of non-punch through trench emitter insulated gate bipolar transistor (IGBT)

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496429

L. Sabesan, P. Mawby, M. Towers, K. Board, P. Waind

引用次数: 1

Abstract

The modelling of steady-state characteristics in a trench emitter IGBT structure is presented. The semiconductor equations were solved in two dimensions with physical effects such as carrier-carrier scattering mobility, SRH and Auger recombination included. The I-V characteristics, internal characteristics forward voltage drop and latch-up characteristics have been investigated. Comparison between simulation and measurement have shown a good agreement.

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非冲穿沟槽发射极绝缘栅双极晶体管(IGBT)分析

建立了沟槽发射极IGBT结构的稳态特性模型。在考虑载流子-载流子散射迁移率、SRH和俄歇复合等物理效应的情况下，对半导体方程进行了二维求解。研究了其I-V特性、内部特性、正向压降和闭锁特性。仿真结果与实测结果比较，结果吻合较好。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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