Surface Charge Based Modeling of TIPS-Pentacene TFT

Abstract

This paper presents TCAD modelling of the 6,13-bis(triisopropylsilylethynyl) Pentacene OTFT. The model is based on defect description and charge reproduction and recombination. This model incorporates metal-semiconductor-insulator interface and contact barrier, field-dependent mobility in TIPS pentacene film. It consists of ‘hopping mobility model’ and ‘multiple trapping and release model’. It describes deep, tail DOS both, and not only matches electrical behavior but also gives a panorama of charge injection, carrier transportation. This model can be used for simulation of other structures also.