Characterization of plasma doped shallow junction

Abstract

Plasma doping technology has been expected to be an alternative method to beam line low energy ion implantation. First application will be shallow junction formation and doping for 3D structures. In this report, we tried to confirm the characterization methods for shallow junction, i.e., SIMS profiling for plasma doped layers shallower than 10 nm. This SIMS measurement method includes determining steepness of the profile tail. It is almost steeper than 2nm/decafe. Optical characteristics of the plasma doped layers were also investigated for optimizing optical annealing procedures.