Electron Avalanches Near a Charged Insulator

S. Mahajan
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Abstract

Electron avalanches near a charged solid insulator have been simulated using four different electric field profiles: Linear exponential, rectangular and triangular. Photoemission from the solid dielectric has been incorporated in the growth of an avalanche. Results indicate the sensitivity of electron avalanche growth to the electric field profile and to a large extent to the photoemissive contribution from the insulator.
带电绝缘体附近的电子雪崩
利用四种不同的电场分布:线性指数、矩形和三角形,模拟了带电固体绝缘体附近的电子雪崩。固体电介质的光发射已被纳入雪崩的生长中。结果表明了电子雪崩生长对电场分布的敏感性,并在很大程度上对绝缘体的光电贡献敏感。
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