{"title":"Electron Avalanches Near a Charged Insulator","authors":"S. Mahajan","doi":"10.1109/SSST.1992.712332","DOIUrl":null,"url":null,"abstract":"Electron avalanches near a charged solid insulator have been simulated using four different electric field profiles: Linear exponential, rectangular and triangular. Photoemission from the solid dielectric has been incorporated in the growth of an avalanche. Results indicate the sensitivity of electron avalanche growth to the electric field profile and to a large extent to the photoemissive contribution from the insulator.","PeriodicalId":359363,"journal":{"name":"The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design System Theory","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design System Theory","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SSST.1992.712332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electron avalanches near a charged solid insulator have been simulated using four different electric field profiles: Linear exponential, rectangular and triangular. Photoemission from the solid dielectric has been incorporated in the growth of an avalanche. Results indicate the sensitivity of electron avalanche growth to the electric field profile and to a large extent to the photoemissive contribution from the insulator.