Band alignment study and plasmon generation at dual ion-beam sputtered Ga:ZnO/ Ga:MgZnO heterojunction interface

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS) Pub Date : 2016-06-26 DOI:10.1109/ICIPRM.2016.7528636

V. Awasthi, Vivek Garg, B. S. Sengar, Rohit Singh, S. Pandey, Shailendra Kumar, C. Mukherjee, S. Mukherjee

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引用次数: 2

Abstract

A flat band offset at 3 atomic% Ga-doped ZnO (GZO)/1 atomic% Ga-doped Mg0.05Zn0.95O (GMZO) interface is obtained with valence and conduction band offset values of -0.045 and -0.065 eV, respectively. The materials are grown by dual ion-beam sputtering (DIBS) system, and the values of band offsets at the interface are calculated by ultraviolet photoelectron spectroscopy measurement. It is observed that the band offset can be further tuned by suitable band-gap engineering by changing the elemental composition of Mg and Ga in ZnO or by altering DIBS growth parameters. Moreover, generation of plasmons in individual GZO and GMZO films due to the formation of metal and metal oxide nanoclusters are observed. This is promising in terms of increasing the efficiency of the solar cell by increasing optical path length in the absorbing layer by light scattering and trapping mechanism.

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双离子束溅射Ga:ZnO/ Ga:MgZnO异质结界面带对准研究及等离子体激元产生

在3原子% ga掺杂ZnO (GZO)/1原子% ga掺杂Mg0.05Zn0.95O (GMZO)界面处得到了一个平坦的能带偏移，价带偏移值为-0.045 eV，导带偏移值为-0.065 eV。采用双离子束溅射(DIBS)系统生长材料，并通过紫外光电子能谱测量计算界面处的能带偏移值。通过改变ZnO中Mg和Ga的元素组成或改变DIBS生长参数，可以通过适当的带隙工程来进一步调节带偏移量。此外，由于金属和金属氧化物纳米团簇的形成，在单个GZO和GMZO薄膜中观察到等离子体激元的产生。这在通过光散射和捕获机制增加吸收层的光路长度来提高太阳能电池的效率方面是有希望的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)

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